An analytical MOS Transistor Model Dedicated to Crosstalk Noise Evaluation
نویسندگان
چکیده
In deep submicron technologies, the noise introduced on signals through the crosstalk coupling is an emerging problem. This paper presents a new analytical MOS transistor model valid in all regions of operation and dedicated to crosstalk noise evaluation and review some useful methods and related work on crosstalk analysis. The same MOS transistor model can be used for the victim and aggressors drivers. The proposed model is validated by comparison to SPICE simulations. Key-Words: MOS Transistor, Model, SPICE Simulation, Crosstalk Noise 1 This study is part of a Ph.D. thesis currently undergoing at University of Paris 6 and funded by ST-Microelectronics.
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